This volume contains invited and contributed papers at the conference on Microscopy of Semiconducting Materials which took place on 21-23 March 1983 in St Cathernine's College, Oxford. The conference was the third in the series devoted to advances in microscopical studies of semiconductors.



Autorentext

A. G. Cullis (Author) , S. M. Davidson (Edited by) , G. R. Booker (Edited by)



Inhalt

Section 1 Structure and properties of dislocations, Section 2 High resolution microscopy, Section 3 Transient annealing phenomena, Section 4 Silicon characterisation, Section 5 Compund semiconductor characterization, Section 6 Scanning EBIC and CL, Section 7 X-ray techniques, Section 8 Non-conventional microscopy, Section 9 Device assement by scanning microscopy, Section 10 Device assessment by transmisison microscopy.

Titel
Microscopy of Semiconducting Materials 1983, Third Oxford Conference on Microscopy of Semiconducting Materials, St Catherines College, March 1983
EAN
9781000112160
Format
PDF
Veröffentlichung
25.11.2020
Digitaler Kopierschutz
Adobe-DRM
Anzahl Seiten
300