This volume contains invited and contributed papers at the conference on Microscopy of Semiconducting Materials which took place on 21-23 March 1983 in St Cathernine's College, Oxford. The conference was the third in the series devoted to advances in microscopical studies of semiconductors.
Autorentext
A. G. Cullis (Author) , S. M. Davidson (Edited by) , G. R. Booker (Edited by)
Inhalt
Section 1 Structure and properties of dislocations, Section 2 High resolution microscopy, Section 3 Transient annealing phenomena, Section 4 Silicon characterisation, Section 5 Compund semiconductor characterization, Section 6 Scanning EBIC and CL, Section 7 X-ray techniques, Section 8 Non-conventional microscopy, Section 9 Device assement by scanning microscopy, Section 10 Device assessment by transmisison microscopy.