The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of st

Introduction. Film Growth and Material Parameters. Principles of SiGe-HBTs. Design of SiGe-HBTs. Simulation of SiGe-HBTs. Strained-Si Heterostructure FETs. SiGe Heterostructure Schottky Diodes. SiGe Optoelectronic Devices. RF Applications of SiGe-HBTs