A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated wi

C.K Maiti, S Chattopadhyay, L.K Bera

Introduction. Strain Engineering in Microelectronics. Strain-Engineered Substrates. Electronic Properties of Engineered Substrates. Gate Dielectrics on Engineered Substrates. Heterostructure SiGe/SiGeC MOSFETs. Strained-Si Heterostructure MOSFETs. Modeling and Simulation of Hetero-FETs.