Four leaders in the field of microwave circuit design share their newest insights into the latest aspects of the technology
The third edition of Microwave Circuit Design Using Linear and Nonlinear Techniques delivers an insightful and complete analysis of microwave circuit design, from their intrinsic and circuit properties to circuit design techniques for maximizing performance in communication and radar systems. This new edition retains what remains relevant from previous editions of this celebrated book and adds brand-new content on CMOS technology, GaN, SiC, frequency range, and feedback power amplifiers in the millimeter range region. The third edition contains over 200 pages of new material.
The distinguished engineers, academics, and authors emphasize the commercial applications in telecommunications and cover all aspects of transistor technology. Software tools for design and microwave circuits are included as an accompaniment to the book. In addition to information about small and large-signal amplifier design and power amplifier design, readers will benefit from the book's treatment of a wide variety of topics, like:
* An in-depth discussion of the foundations of RF and microwave systems, including Maxwell's equations, applications of the technology, analog and digital requirements, and elementary definitions
* A treatment of lumped and distributed elements, including a discussion of the parasitic effects on lumped elements
* Descriptions of active devices, including diodes, microwave transistors, heterojunction bipolar transistors, and microwave FET
* Two-port networks, including S-Parameters from SPICE analysis and the derivation of transducer power gain
Perfect for microwave integrated circuit designers, the third edition of Microwave Circuit Design Using Linear and Nonlinear Techniques also has a place on the bookshelves of electrical engineering researchers and graduate students. It's comprehensive take on all aspects of transistors by world-renowned experts in the field places this book at the vanguard of microwave circuit design research.
Autorentext
George D. Vendelin is Adjunct Professor at Stanford, Santa Clara, and San Jose State Universities, as well as UC-Berkeley-Extension. He is a Fellow of the IEEE and has over 40 years of microwave engineering design and teaching experience.
Anthony M. Pavio, PhD, is Manager of the Phoenix Design Center for Rockwell Collins. He is a Fellow of the IEEE and was previously Manager at the Integrated RF Ceramics Center for Motorola Labs.
Ulrich L. Rohde is a Professor of Technical Informatics, University of the Joint Armed Forces, in Munich, Germany; a member of the staff of other universities world-wide; partner of Rohde & Schwarz, Munich; and Chairman of the Board of Synergy Microwave Corporation. He is the author of two editions of Microwave and Wireless Synthesizers: Theory and Design.
Dr.-Ing. Matthias Rudolph is Ulrich L. Rohde Professor for RF and Microwave Techniques at Brandenburg University of Technology in Cottbus, Germany and heads the low-noise components lab at the Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik in Berlin.
Klappentext
MICROWAVE CIRCUIT DESIGN USING LINEAR AND NONLINEAR TECHNIQUES
Four leaders in the field of microwave circuit design share their newest insights into the latest aspects of the technology
The third edition of Microwave Circuit Design Using Linear and Nonlinear Techniques delivers an insightful and complete analysis of microwave circuit design, from their intrinsic and circuit properties to circuit design techniques for maximizing performance in communication and radar systems. This new edition retains what remains relevant from previous editions of this celebrated book and adds brand-new content on CMOS technology, GaN, SiC, frequency range, and feedback power amplifiers in the millimeter range region. The third edition contains over 200 pages of new material.
The distinguished engineers, academics, and authors emphasize the commercial applications in telecommunications and cover all aspects of transistor technology. Software tools for design and microwave circuits are included as an accompaniment to the book. In addition to information about small and large-signal amplifier design and power amplifier design, readers will benefit from the book's treatment of a wide variety of topics, like:
* An in-depth discussion of the foundations of RF and microwave systems, including Maxwell's equations, applications of the technology, analog and digital requirements, and elementary definitions
* A treatment of lumped and distributed elements, including a discussion of the parasitic effects on lumped elements
* Descriptions of active devices, including diodes, microwave transistors, heterojunction bipolar transistors, and microwave FET
* Two-port networks, including S-Parameters from SPICE analysis and the derivation of transducer power gain
Perfect for microwave integrated circuit designers, the third edition of Microwave Circuit Design Using Linear and Nonlinear Techniques also has a place on the bookshelves of electrical engineering researchers and graduate students. It's comprehensive take on all aspects of transistors by world-renowned experts in the field places this book at the vanguard of microwave circuit design research.
Inhalt
Foreword xv
Preface xvii
1 RF/Microwave Systems 1
1.1 Introduction 1
1.2 Maxwell's equations 12
1.3 Frequency bands, modes, and waveforms of operation 12
1.4 Analog and digital signals 16
1.5 Elementary functions 25
1.6 Basic RF transmitters and receivers 31
1.7 RF wireless/microwave/millimeter wave applications 33
1.8 Modern CAD for nonlinear circuit analysis 37
1.9 Dynamic Load Line 37
2 Lumped and Distributed Elements 43
2.1 Introduction 43
2.2 Transition from RF to Microwave Circuits 43
2.3 Parasitic E_ects on Lumped Elements 46
2.4 Distributed Elements 54
2.5 Hybrid Element: Helical Coil 55
v
vi CONTENTS
3 Active Devices 61
3.1 Microwave Transistors 61
3.1.1 Transistor Classi_cation 61
3.1.2 Bipolar Transistor Basics 63
3.1.3 GaAs and InP Heterojunction Bipolar Transistors 77
3.1.4 SiGe HBTs 90
3.1.5 Field-E_ect Transistor Basics 95
3.1.6 GaN, GaAs, and InP HEMTs 106
3.1.7 MOSFETs 112
3.1.8 Packaged Transistors 130
3.2 Example: Selecting Transistor and Bias for Low-Noise
Ampli_cation 134
3.3 Example: Selecting Transistor and Bias for Oscillator Design 138
3.4 Example: Selecting Transistor and Bias for Power Ampli_cation 141
3.4.1 Biasing HEMTs 143
3.4.2 Biasing HBTs 145
4 Two-Port Networks 153
4.1 Introduction 153
4.2 Two-Port Parameters 154
4.3 S Parameters 163
4.4 S Parameters from SPICE Analysis 164
4.5 Mason Graphs 165
4.6 Stability 168
4.7 Power Gains, Voltage Gain, and Current Gain 171
4.7.1 Power Gain 171
4.7.2 Voltage Gain and Current Gain 177
4.7.3 Current Gain 178
4.8 Three-Ports 179
4.9 Derivation of Transducer Power Gain 182
4.10 Di_erential S Parameters 184
4.10.1 Measurements 186
4.10.2 Example 187
4.11 Twisted-Wire Pair Lines 187
4.12 Low-Noise and High-Power Ampli_er Design 190
4.13 Low-Noise Ampli_er Design Examples 193
5 Impedance Matching 209
5.1 Introduction 209
5.2 Smith Charts and Matching 209
5.3 Impedance Matching Networks 217
CONTENTS vii
5.4 Single-Element Matching 217
5.5 Two-Element Matching 219
5.6 Matching Networks Using Lu…