"An excellent introduction to the SiGe BiCMOS technology, from the
underlying device physics to current applications."
-Ron Wilson, EETimes
"SiGe technology has demonstrated the ability to provide excellent
high-performance characteristics with very low noise, at high power
gain, and with excellent linearity. This book is a comprehensive
review of the technology and of the design methods that go with
it."
-Alberto Sangiovanni-Vincentelli
Professor, University of California, Berkeley
Cofounder, Chief Technology Officer, Member of Board
Cadence Design Systems Inc.
Filled with in-depth insights and expert advice, Silicon Germanium
covers all the key aspects of this technology and its applications.
Beginning with a brief introduction to and historical perspective
of IBM's SiGe technology, this comprehensive guide quickly moves on
to:
* Detail many of IBM's SiGe technology development programs
* Explore IBM's approach to device modeling and
characterization-including predictive TCAD modeling
* Discuss IBM's design automation and signal integrity knowledge
and implementation methodologies
* Illustrate design applications in a variety of IBM's SiGe
technologies
* Highlight details of highly integrated SiGe BiCMOS system-on-chip
(SOC) design
Written for RF/analog and mixed-signal designers, CAD designers,
semiconductor students, and foundry process engineers worldwide,
Silicon Germanium provides detailed insight into the modeling and
design automation requirements for leading-edge RF/analog and
mixed-signal products, and illustrates in-depth applications that
can be implemented using IBM's advanced SiGe process technologies
and design kits.
"This volume provides an excellent introduction to the SiGe BiCMOS
technology, from the underlying device physics to current
applications. But just as important is the window the text provides
into the infrastructure-the process development, device modeling,
and tool development."
-Ron Wilson
Silicon Engineering Editor, EETimes
"This book chronicles the development of SiGe in detail, provides
an in-depth look at the modeling and design automation requirements
for making advanced applications using SiGe possible, and
illustrates such applications as implemented using IBM's process
technologies and design methods."
-John Kelly
Senior Vice President and Group Executive, Technology Group, IBM
Autorentext
RAMINDERPAL SINGH, PhD, is a Senior Engineer at IBM’s RF/AMS Design Kit Group where he leads various projects related to transmission line model development, substrate modeling, and RF/mixed-signal design methodologies. Dr. Singh has authored numerous technical publications in the area of signal integrity, and is Director of VSIA, as well as a Senior Member of IEEE.
DAVID L. HARAME, PhD, is Director of the RF/Analog and Mixed Signal Process Development, Modeling, and Design Automation area at IBM. He is an IEEE Fellow, Executive Committee member of the Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), and member of the Compact Model Council.
MODEST M. OPRYSKO, PhD, joined IBM in 1986 and has held numerous management positions directing technology and application development activities spanning the areas of fiber optics, wireless (infrared and radio frequency technology), packaging technology, and circuit design devoted to communications applications. Currently, he is the Senior Manager of Communication Link Architecture, Design and Test.
Klappentext
"An excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications."
–Ron Wilson, EETimes
"SiGe technology has demonstrated the ability to provide excellent high-performance characteristics with very low noise, at high power gain, and with excellent linearity. This book is a comprehensive review of the technology and of the design methods that go with it."
–Alberto Sangiovanni-Vincentelli
Professor, University of California, Berkeley
Cofounder, Chief Technology Officer, Member of Board
Cadence Design Systems Inc.
Filled with in-depth insights and expert advice, Silicon Germanium covers all the key aspects of this technology and its applications. Beginning with a brief introduction to and historical perspective of IBM’s SiGe technology, this comprehensive guide quickly moves on to:
- Detail many of IBM’s SiGe technology development programs
- Explore IBM’s approach to device modeling and characterization–including predictive TCAD modeling
- Discuss IBM’s design automation and signal integrity knowledge and implementation methodologies
- Illustrate design applications in a variety of IBM’s SiGe technologies
- Highlight details of highly integrated SiGe BiCMOS system-on-chip (SOC) design
Written for RF/analog and mixed-signal designers, CAD designers, semiconductor students, and foundry process engineers worldwide, Silicon Germanium provides detailed insight into the modeling and design automation requirements for leading-edge RF/analog and mixed-signal products, and illustrates in-depth applications that can be implemented using IBM’s advanced SiGe process technologies and design kits.
"This volume provides an excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications. But just as important is the window the text provides into the infrastructure–the process development, device modeling, and tool development."
–Ron Wilson
Silicon Engineering Editor, EETimes
"This book chronicles the development of SiGe in detail, provides an in-depth look at the modeling and design automation requirements for making advanced applications using SiGe possible, and illustrates such applications as implemented using IBM’s process technologies and design methods."
–John Kelly
Senior Vice President and Group Executive, Technology Group, IBM
Inhalt
Contributors.
Foreword.
Preface.
Acknowledgments.
Introduction.
A Historical Perspective at IBM.
Technology Development.
Modeling and Characterization.
Design Automation and Signal Integrity.
Leading-Edge Applications.
Appendix.
Index.
About the Authors.