Ein praxisrelevanter Überblick über die aktuellsten computergestützten Simulationsmethoden in den Materialwissenschaften - unentbehrlich für moderne, anwendungsorientierte Materialforschung!
Autorentext
Roman Leitsmann is project leader at GWT-TUD, a leading company for knowledge and technology transfer, in Chemnitz, Germany. After having obtained his PhD in physics from the University of Jena, he changed to GWT-TUD where he is responsible for several research and development projects with industrial partners. In 2011 he received the Nanoscience Award commissioned by the Working Group of the Centers of Competence of Nanotechnology in Germany.
Philipp Plänitz is CEO of AQcomputare, a company focusing on the calculation of materials properties with ab-initio methods as a service for industrial companies. He received the Diploma and PhD degrees in physics from the Chemnitz University of Technology in 2004 and 2009, respectively. In 2009 he founded AQcomputare, a GWT-TUD spin-off company. His research interests include industrial applications of atomic scale methods for calculating a wide range of material properties.
Michael Schreiber is Full Professor of Physics at Chemnitz University of Technology since 1993. After his PhD in physics, obtained from the Technical University of Dortmund, he moved to Tokyo University for two years. He obtained his first professorship in theoretical chemistry from the University of Mainz in 1990 and was Dean of the Faculty of Science from 1998 to 2001. Michael Schreiber has authored or co-authored more than 330 refereed scientific publications, edited 15 books and contributed to more than 100 books and proceedings.
Klappentext
An overview of the latest computational materials science methods on an atomic scale.
The authors present the physical and mathematical background in sufficient detail for this highly current and important topic, but without unnecessary complications. They focus on approaches with industrial relevance, covering reallife applications taken from concrete projects that range from chemical processes to performance optimization of integrated circuits.
Following an introduction to the fundamentals, the book describes the most relevant approaches, covering such classical simulation methods as simple and reactive force field methods, as well as highly accurate quantum-mechanical methods ranging from density-functional theory to Hartree-Fock and beyond. A review of the increasingly important multiscale approaches rounds off this section.
The last section demonstrates and illustrates the capabilities of the methods previously described using recent real-life examples of industrial applications. As a result, readers can gain a heightened user awareness, since the authors clearly state the conditions of applicability for the respective modeling methods so as to avoid fatal mistakes.
Inhalt
Preface IX
Part I Basic Physical and Mathematical Principles 1
1 Introduction 3
2 Newtonian Mechanics and Thermodynamics 5
2.1 Equation of Motion 5
2.2 Energy Conservation 7
2.3 Many Body Systems 10
2.4 Thermodynamics 11
3 Operators and Fourier Transformations 17
3.1 Complex Numbers 17
3.2 Operators 18
3.3 Fourier Transformation 20
4 Quantum Mechanical Concepts 25
4.1 Heuristic Derivation 25
4.2 Stationary Schrödinger Equation 27
4.3 Expectation Value and Uncertainty Principle 28
5 Chemical Properties and Quantum Theory 33
5.1 Atomic Model 33
5.2 Molecular OrbitalTheory 39
6 Crystal Symmetry and Bravais Lattice 47
6.1 Symmetry in Nature 47
6.2 Symmetry in Molecules 47
6.3 Symmetry in Crystals 49
6.4 Bloch Theorem and Band Structure 53
Part II ComputationalMethods 57
7 Introduction 59
8 Classical SimulationMethods 65
8.1 Molecular Mechanics 65
8.2 Simple Force-Field Approach 68
8.3 Reactive Force-Field Approach 71
9 Quantum Mechanical Simulation Methods 77
9.1 BornOppenheimer Approximation and Pseudopotentials 77
9.2 HartreeFock Method 80
9.3 Density Functional Theory 83
9.4 Meaning of the Single-Electron Energies within DFT and HF 85
9.5 Approximations for the ExchangeCorrelation Functional EXC 88
9.5.1 Local Density Approximation 88
9.5.2 Generalized Gradient Approximation 89
9.5.3 Hybrid Functionals 90
9.6 Wave Function Representations 91
9.6.1 Real-Space Representation 91
9.6.2 PlaneWave Representation 92
9.6.3 Local Basis Sets 93
9.6.4 Combined Basis Sets 95
9.7 Concepts Beyond HF and DFT 96
9.7.1 Quasiparticle Shift and the GWApproximation 97
9.7.2 Scissors Shift 99
9.7.3 Excitonic Effects 100
9.7.4 TDDFT 100
9.7.5 Post-HartreeFock Methods 101
9.7.5.1 Configuration Interaction (CI) 102
9.7.5.2 Coupled Cluster (CC) 102
9.7.5.3 MøllerPlesset PerturbationTheory (MPn) 103
10 Multiscale Approaches 105
10.1 Coarse-Grained Approaches 105
10.2 QM/MM Approaches 108
11 Chemical Reactions 111
11.1 Transition State Theory 111
11.2 Nudged Elastic Band Method 114
Part III Industrial Applications 117
12 Introduction 119
13 Microelectronic CMOS Technology 121
13.1 Introduction 121
13.2 Work Function Tunability in High-k Gate Stacks 127
13.2.1 Concrete Problem and Goal 127
13.2.2 Simulation Approach 129
13.2.3 Modeling of the Bulk Materials 129
13.2.4 Construction of the HKMG Stack Model 132
13.2.5 Calculation of the Band Alignment 136
13.2.6 Simulation Results and Practical Impact 138
13.3 Influence of Defect States in High-k Gate Stacks 141
13.3.1 Concrete Problem and Goal 141
13.3.2 Simulation Approach and Model System 144
13.3.3 Calculation of the Charge Transition Level 145
13.3.4 Simulation Results and Practical Impact 146
13.4 Ultra-Low-k Materials in the Back-End-of-Line 149
13.4.1 Concrete Problem and Goal 149
13.4.2 Simulation Approach 151
13.4.3 The Silylation Process: Preliminary Considerations 153
13.4.4 Simulation Results and Practical Impact 155
14 Modeling of Chemical Processes 159
14.1 Introduction 159
14.2 GaN Crystal Growth 163
14.2.1 Concrete Problem and Goal 163
14.2.2 Simulation Approach 165