A comprehensive introduction and up-to-date reference to
SiC power semiconductor devices covering topics from material
properties to applications

Based on a number of breakthroughs in SiC material science
and fabrication technology in the 1980s and 1990s, the first SiC
Schottky barrier diodes (SBDs) were released as commercial products
in 2001. The SiC SBD market has grown significantly since
that time, and SBDs are now used in a variety of power systems,
particularly switch-mode power supplies and motor controls.
SiC power MOSFETs entered commercial production in 2011,
providing rugged, high-efficiency switches for high-frequency power
systems. In this wide-ranging book, the authors draw on their
considerable experience to present both an introduction to SiC
materials, devices, and applications and an in-depth reference for
scientists and engineers working in this fast-moving
field. Fundamentals of Silicon Carbide Technology
covers basic properties of SiC materials, processing technology,
theory and analysis of practical devices, and an overview of the
most important systems applications. Specifically included
are:

* A complete discussion of SiC material properties, bulk crystal
growth, epitaxial growth, device fabrication technology, and
characterization techniques.

* Device physics and operating equations for Schottky diodes, pin
diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and
thyristors.

* A survey of power electronics applications, including
switch-mode power supplies, motor drives, power converters for
electric vehicles, and converters for renewable energy
sources.

* Coverage of special applications, including microwave devices,
high-temperature electronics, and rugged sensors.

* Fully illustrated throughout, the text is written by recognized
experts with over 45 years of combined experience in SiC research
and development.

This book is intended for graduate students and researchers in
crystal growth, material science, and semiconductor device
technology. The book is also useful for design engineers,
application engineers, and product managers in areas such as power
supplies, converter and inverter design, electric vehicle
technology, high-temperature electronics, sensors, and smart grid
technology.

Tsunenobu Kimoto, Department of Electronic Science and Engineering, Kyoto University, Japan.
Professor Kimoto has been involved in SiC research for more than 20 years and his research activity in this field covers growth, optical and electrical characterization, device processing, device design and fabrication. He has published more than 300 papers in international journals and has presented more than 50 invited talks at international conferences. He was a guest editor of the 2008 SiC special issues of IEEE Transactions on Electron Devices.

James A Cooper, School of Electrical and Computer Engineering, Purdue University, Indiana, USA
Professor Cooper was a member of technical staff at Bell Laboratories for ten years where he was principal designer of AT&T's first microprocessor and investigated nonlinear transport in silicon inversion layers. His research at Purdue has centered on semiconductor device physics and characterization, focusing primarily on III-V materials and silicon carbide. He has co-authored over 250 technical papers and conference presentations.

A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications

Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are:

• A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques.
• Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors.
• A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources.
• Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors.
• Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development.

This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

About the Authors xi

Preface xiii

1 Introduction 1

1.1 Progress in Electronics 1

1.2 Features and Brief History of Silicon Carbide 3

1.2.1 Early History 3

1.2.2 Innovations in SiC Crystal Growth 4

1.2.3 Promise and Demonstration of SiC Power Devices 5

1.3 Outline of This Book 6

References 6

2 Physical Properties of Silicon Carbide 11

2.1 Crystal Structure 11

2.2 Electrical and Optical Properties 16

2.2.1 Band Structure 16

2.2.2 Optical Absorption Coefficient and Refractive Index 18

2.2.3 Impurity Doping and Carrier Density 20

2.2.4 Mobility 23

2.2.5 Drift Velocity 27

2.2.6 Breakdown Electric Field Strength 28

2.3 Thermal and Mechanical Properties 30

2.3.1 Thermal Conductivity 30

2.3.2 Phonons 31

2.3.3 Hardness and Mechanical Properties 32

2.4 Summary 32

References 33

3 Bulk Growth of Silicon Carbide 39

3.1 Sublimation Growth 39

3.1.1 Phase Diagram of Si-C 39

3.1.2 Basic Phenomena Occurring during the Sublimation (Physical Vapor Transport) Method 39

3.1.3 Modeling and Simulation 44

3.2 Polytype Control in Sublimation Growth 46

3.3 Defect Evolution and Reduction in Sublimation Growth 50

3.3.1 Stacking Faults 50

3.3.2 Micropipe Defects 51

3.3.3 Threading Screw Dislocation 53

3.3.4 Threading Edge Dislocation and Basal Plane Dislocation 54

3.3.5 Defect Reduction 57

3.4 Doping Control in Sublimation Growth 59

3.4.1 Impurity Incorporation 59

3.4.2 n-Type Doping 61

3.4.3 p-Type Doping 61

3.4.4 Semi-Insulating 62

3.5 High-Temperature Chemical Vapor Deposition 64

3.6 Solution Growth 66

3.7 3C-SiC Wafers Grown by Chemical Vapor Deposition 67

3.8 Wafering and Polishing 67

3.9 Summary 69

References 69

4 Epitaxial Growth of Silicon Carbide …