GaN and ZnO nanowires can by grown using a wide variety of methods from physical vapor deposition to wet chemistry for optical devices. This book starts by presenting the similarities and differences between GaN and ZnO materials, as well as the assets and current limitations of nanowires for their use in optical devices, including feasibility and perspectives. It then focuses on the nucleation and growth mechanismsof ZnO and GaN nanowires, grown by various chemical and physical methods. Finally, it describes the formation of nanowire heterostructures applied to optical devices.



Autorentext

Vincent Consonni is Associate Scientist at CNRS (French National Center for Research) in France. His research has focused on the physics of crystal growth and of condensed matter for micro- and nano-structures involving compound semiconductors such as CdTe, GaN, ZnO and SnO2. He is currently working on transparent conductive materials and ZnO nanowire-based solar cells. He has published approximately 30 articles in peer-reviewed journals.

Guy Feuillet is Senior Scientist at CEA (French Atomic and Alternative Energy Commission), France. He has initiated and coordinated many internal programs (GaN nanostructures, X-ray detectors for medical imaging, solid state lighting) and R&D programs during his work at CEA. He is a permanent member of the scientific advisory board at CEA/LETI, and a member of the selection committee for the French National Agency for Research (ANR). He has published about 120 papers in peer-reviewed journals.



Inhalt

Preface xi

Part 1 GaN and ZnO Nanowires: Low-Dimensionality Effects
1

Chapter 1 Quantum and Optical Confinement 3

Le Si Dang

Chapter 2 Stress Relaxation in Nanowires with Heterostructures
25

Frank Glas

Chapter 3 Surface-Related Optical Properties of GaN-Based
Nanowires 59

Pierre Lefebvre

Chapter 4 Surface Related Optical Properties of ZnO Nanowires
81

Tobias Voss and Jürgen Gutowski

Chapter 5 Doping and Transport 99

Julien Pernot, Fabrice Donatini and Pierre Tchoulfian

Chapter 6 Microstructure of Group III-N Nanowires 125

Achim Trampert, Xiang Kong, Esperanza Luna, Javier Grandal and
Bernd Jenichen

Part 2 Nucleation and Growth Mechanisms of GaN and ZnO
Nanowires 157

Chapter 7 Ni Collector-Induced Growth of GaN Nanowire on C-Plane
Sapphere by Plama-Assisted Molecular Beam Epitaxy 159

Caroline Chèze

Chapter 8 Self-Induced Growth of GaN Nanowires by Molecular Beam
Epitaxy 177

Vincent Consonni

Chapter 9 Selective Area Growth of GaN Nanowires by
Plama-Assisted Molecular Beam Epitaxy 215

Miguel A Sanchez-Garcia, steven Albert, Ana M.
Bengoechea-Encabo, Francesca Barbagini and Enrique Calleja

Chapter 10 Metal-Organic Vapor Phase Epitaxy Growth of GaN
Nanorods 245

Joël Eymery

Chapter 11 Metal-Organic Chemical Vaport Deposition Growth of
ZnO Nanowires 265

Vincent Sallet

Chapter 12 Pulsed-Laser Deposition of ZnO Nanowires 303

Christoph Peter Dietrich and Marius Grundmann

Chapter 13 Preparation of ZnO Nanorods and Nanowires by Wet
Chemistry 325

Thierry Pauporté

List of Authors 379

Titel
Wide Band Gap Semiconductor Nanowires 1
Untertitel
Low-Dimensionality Effects and Growth
EAN
9781118984307
ISBN
978-1-118-98430-7
Format
E-Book (epub)
Hersteller
Herausgeber
Veröffentlichung
08.08.2014
Digitaler Kopierschutz
Adobe-DRM
Dateigrösse
11.83 MB
Anzahl Seiten
352
Jahr
2014
Untertitel
Englisch