This Third Edition updates a landmark text with the
latest findings
The Third Edition of the internationally lauded
Semiconductor Material and Device Characterization brings
the text fully up-to-date with the latest developments in the field
and includes new pedagogical tools to assist readers. Not only does
the Third Edition set forth all the latest measurement
techniques, but it also examines new interpretations and new
applications of existing techniques.
Semiconductor Material and Device Characterization
remains the sole text dedicated to characterization techniques for
measuring semiconductor materials and devices. Coverage includes
the full range of electrical and optical characterization methods,
including the more specialized chemical and physical techniques.
Readers familiar with the previous two editions will discover a
thoroughly revised and updated Third Edition, including:
* Updated and revised figures and examples reflecting the most
current data and information
* 260 new references offering access to the latest research and
discussions in specialized topics
* New problems and review questions at the end of each chapter to
test readers' understanding of the material
In addition, readers will find fully updated and revised
sections in each chapter.
Plus, two new chapters have been added:
* Charge-Based and Probe Characterization introduces charge-based
measurement and Kelvin probes. This chapter also examines
probe-based measurements, including scanning capacitance, scanning
Kelvin force, scanning spreading resistance, and ballistic electron
emission microscopy.
* Reliability and Failure Analysis examines failure times and
distribution functions, and discusses electromigration, hot
carriers, gate oxide integrity, negative bias temperature
instability, stress-induced leakage current, and electrostatic
discharge.
Written by an internationally recognized authority in the field,
Semiconductor Material and Device Characterization remains
essential reading for graduate students as well as for
professionals working in the field of semiconductor devices and
materials.
An Instructor's Manual presenting detailed solutions to all the
problems in the book is available from the Wiley editorial
department.
Autorentext
DIETER K. SCHRODER, PhD, is Professor, Department of Electrical Engineering, Arizona State University. He is a recipient of the ASU College of Engineering Teaching Excellence Award and several other teaching awards. In addition to Semiconductor Material and Device Characterization, Dr. Schroder is the author of Advanced MOS Devices.
Klappentext
This Third Edition updates a landmark text with the latest findings
The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques.
Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including:
- Updated and revised figures and examples reflecting the most current data and information
- 260 new references offering access to the latest research and discussions in specialized topics
- New problems and review questions at the end of each chapter to test readers' understanding of the material
In addition, readers will find fully updated and revised sections in each chapter.
Plus, two new chapters have been added:
- Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy.
- Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge.
Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials.
Zusammenfassung
This Third Edition updates a landmark text with the latest findings
The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques.
Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including:
- Updated and revised figures and examples reflecting the most current data and information
- 260 new references offering access to the latest research and discussions in specialized topics
- New problems and review questions at the end of each chapter to test readers' understanding of the material
In addition, readers will find fully updated and revised sections in each chapter.
Plus, two new chapters have been added:
- Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy.
- Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge.
Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials.
An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Inhalt
Preface to Third Edition xiii
1 Resistivity 1
1.1 Introduction, 1
1.2 Two-Point Versus Four-Point Probe, 2
1.2.1 Correction Factors, 8
1.2.2 Resistivity of Arbitrarily Shaped Samples, 14
1.2.3 Measurement Circuits, 18
1.2.4 Measurement Errors and Precautions, 18
1.3 Wafer Mapping, 21
1.3.1 Double Implant, 21
1.3.2 Modulated Photoreflectance, 23
1.3.3 Carrier Illumination (CI), 24
1.3.4 Optical Densitometry, 2…